发明名称 |
PRODUCTION OF HIGH PURITY TITANIUM INGOT |
摘要 |
<p>PROBLEM TO BE SOLVED: To produce a low-oxygen and high-purity titanium material used for semi-conductor wiring material in high productivity. SOLUTION: (1) Into the inner part of a cylindrical precipitated titanium material produced by an Iodide method, an inner electrode 3 welded with a compact press-forming sponge titanium is inserted to form a consumable electrode and this consumable electrode is melted with vacuum-arc 4. (2) As the same way, an inner electrode welded with a titanium scrap or a titanium crop is inserted to form a consumable electrode and this consumable electrode is melted with vacuum-arc. In the above method, the oxygen concn. in the cylindrical precipitated titanium material is desirably lower than the oxygen concn. in the inner electrode inserted into the inner part thereof. Further, it is desirable to arrange fixed portions 7 respectively in the cylindrical precipitated titanium material 2 and the inner electrode inserted into the inner part thereof.</p> |
申请公布号 |
JP2000204422(A) |
申请公布日期 |
2000.07.25 |
申请号 |
JP19990004687 |
申请日期 |
1999.01.11 |
申请人 |
SUMITOMO SITIX AMAGASAKI:KK |
发明人 |
ONISHI TAKASHI;YOSHIMURA YASUTOKU;SHIRAISHI HIROAKI |
分类号 |
C22B9/20;C22B34/12;(IPC1-7):C22B9/20 |
主分类号 |
C22B9/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|