| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to manufacture a titanium silicide layer having resistance lower than a tungsten silicide layer. CONSTITUTION: A semiconductor device includes electric devices on a semiconductor substrate(101). An interconnection made of a titanium silicide layer(105) is formed on the semiconductor substrate. The titanium silicide layer includes at least one component selected from a group including phosphor, arsenium, and antimon at the concentration in the range of 5x10¬19 to 3x10¬20 atoms/cm¬3. The molar ratio of the titanium to silicon is in the range of 2.1 to 2.7.</p> |
