发明名称 VARIABLE HIGH TEMPERATURE CHUCK FOR HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION
摘要 PURPOSE: An ESC is provided, which has both active heating control and active cooling control, and controlls actively temperature with feedback control to maintain a predetermined temperature. CONSTITUTION: An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions
申请公布号 KR20000048751(A) 申请公布日期 2000.07.25
申请号 KR19997002736 申请日期 1999.03.30
申请人 LAM RESEARCH CORPORATION 发明人 BARNES MICHAEL;BERNEY BUTCH;MCMILLIN BRIAN;NGUYEN HUONG
分类号 H01L21/68;H01L21/683;(IPC1-7):H01L21/68 主分类号 H01L21/68
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