| 摘要 |
PURPOSE: A thin film transistor matrix and a manufacturing method thereof are provided to enable the repair of wiring defects. CONSTITUTION: A thin film transistor(TFT) matrix includes a plurality of TFTs disposed in a matrix form on a transparent insulating substrate(1), and a plurality of pixel electrodes(PX) each of which is connected to a source electrode of each TFT and disposed on the substrate(1). The TFT matrix further includes a plurality of gate lines(GL) each of which is connected to a gate electrode of each TFT and disposed along the row direction on the substrate(1), and a plurality of drain lines(DL) each of which is connected to a drain electrode of each TFT and disposed along a column direction on the substrate(1). In particular, the gate line(GL) has a first metal layer(3) and an underlying first semiconductor layer(2), whereas the drain line(DL) has a second metal layer(9) and an underlying second semiconductor layer(8). The gate line(GL) and the drain line(DL) are electrically isolated by a gate insulating layer(4) interposed therebetween. Besides, another semiconductor layer(5) for a channel may be formed underneath the drain line(DL), and a protective layer(13) covers the gate lines(GL) and the drain lines(DL).
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