SELF-ALIGNMENT CHANNEL INJECTION TRANSISTOR

摘要

PURPOSE: A self-alignment channel injection transistor is provided to reduce a so called short channel effect which causes junction capacitance of p-n junction as well as a leakage current to be increased. CONSTITUTION: A self-alignment channel injection transistor includes a first and second regions, a dielectric layer(17), a gate interconnection(18), and a burial region(16). The first and second regions are of a conductive type opposite to that of the semiconductor substrate(10). The first and second regions are divided by a part of the semiconductor substrate. The dielectric layer(17) is implemented on the surface of the semiconductor substrate in the first and second regions to operate as a gate insulation member. The gate interconnection(18) is implemented on the dielectric layer so as to operate as a gate. The burial region(16) is aligned with the gate interconnection. The concentration of impurities of the burial region is higher than that of the semiconductor substrate. The burial region further is implemented between the first and second regions.