| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent leakage between an upper interconnection and a lower interconnection due to copper expansion. CONSTITUTION: A semiconductor device includes an insulation layer(1), a copper interconnection(4), a first copper expansion protector(3a), a third copper expansion protector(3b), and a copper via plug(11). The insulation layer(1) is formed so as to include a depression member(2) on the surface. The copper interconnection(4) is formed in the depression member. The first copper expansion protector(3a) is inserted between the copper interconnection and the insulation layer. The third copper expansion protector(3b) is formed on the copper interconnection. The copper via plug(11) is electrically coupled with the copper interconnection. A second copper expansion protector(12) is further provided according to the present invention around the copper interconnection between the insulation layer and the third copper expansion protector. The copper via plug penetrates the second copper expansion protector(12), but does not reach the insulation layer.
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