| 摘要 |
PURPOSE: An ionized metal plasma apparatus is provided to improve a straight moving ability of a metal atom, thereby providing a layer covering property to a contact base portion of a semiconductor having a high aspect ratio. CONSTITUTION: An ionized metal plasma apparatus consists of a target(21), a collimator(26), a high frequency coil(22) and a wafer(24). The target(21) is formed of a metal material to be deposited on a wafer in a chamber(20) and the target sputters metal atoms by a DC magnetron(23). The collimator(26) improves a straight moving ability of the metal ions. The high frequency coil(22) on which a high frequency electric power is exerted changes the metal atoms having improved straight moving ability into an ion state. And the wafer(24) on which the metal ions changed by the high frequency coil are deposited by an electric potential difference with the DC magnetron when the high frequency electric power is exerted. The target is formed of one metal material out of aluminum, titanium and copper.
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