| 摘要 |
PROBLEM TO BE SOLVED: To provide a growing method of a GaN compd. semiconductor crystal in which the crystal can be grown along the 11-24} planer direction as the growing direction where the inner electric field is zero, and to provide a GaN compd. semiconductor crystal obtd. by this growing method, and a semiconductor device using the GaN compd. semiconductor crystal substrate. SOLUTION: In the growing method of a GaN compd. semiconductor crystal on a rare earth 13 (3B) perovskite crystal substrate containing one or more kinds of rare earth elements, the substrate is subjected to first cleaning with an org. solvent and to second cleaning with an inorg. acid as pretreatment so that the substrate surface has a surface state to grow the 11-24} plane of a GaN compd. semiconductor crystal. Concretely, the first cleaning process using an org. solvent is carried out (1) by boiling the substrate in trichloroethylene and then degreasing under untrasonics in acetone and methanol. Or, the process is carried out by (2) ultrasonic cleaning using acetone and methanol. In the second cleaning using an inorg. acid, the substrate is subjected to etching in a mixture soln. having the volume ratio of phosphoric acid to sulfuric acid of 1:3. The process (1) is preferably carried out in an environment over 80 deg.C.
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