发明名称 |
Method to selectively electroplate conductive material into trenches |
摘要 |
A method of filling trenches in a semiconductor wafer with a conductive material is disclosed by selectively electroplating the semiconductor wafer. The trenches are lined with a barrier layer and a seed layer and the semiconductor wafer is submerged in a solution having ions of the selected conductive material. An electrical potential is applied to the electroplating solution and the semiconductor wafer. The seed layer in the trench causes the conductive material ions to be plated in the trench.
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申请公布号 |
US6093647(A) |
申请公布日期 |
2000.07.25 |
申请号 |
US19980186053 |
申请日期 |
1998.11.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU, ALLEN S.;STEFFAN, PAUL J. |
分类号 |
H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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