发明名称 |
Post-treatment method for dry etching |
摘要 |
In order to provide a post-treatment method for dry etching which is improved to be capable of completely removing a deposit resulting from dry etching for forming a wire, a workpiece layer is formed on an underlayer oxide film which is formed on a wafer. A resist pattern having a prescribed shape is formed on the workpiece layer. The workpiece layer is dry-etched through the resist pattern serving as a mask. The resist pattern is removed. Ice particles or droplets are injected toward the wafer, thereby removing the deposit.
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申请公布号 |
US6092537(A) |
申请公布日期 |
2000.07.25 |
申请号 |
US19970786379 |
申请日期 |
1997.01.17 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KANNO, ITARU |
分类号 |
H01L21/302;B24C1/04;H01L21/02;H01L21/304;H01L21/3065;H01L21/311;H01L21/3213;(IPC1-7):B08B6/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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