SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to manufacture a field effect transistor without reducing gate channel length and forming bird's beek. CONSTITUTION: A semiconductor device includes following steps. At the first step, a gate for a transistor including oxidation material is formed. At the second step, an oxidation resist layer(32) is formed on the gate formed at the first step. At the third step, the gate with the oxidation resist layer is deposited in an oxidation atmosphere. At the fourth step, a source and drain region for the transistor are formed. The fourth step further uses the gate as a mask during forming the source and the drain regions of the transistor.