METHOD FOR FORMING METAL WIRE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal wire of a semiconductor device is to eliminate a residue of a photoresist or a relux using the relux, thereby increasing a yield ratio of a product. CONSTITUTION: A method for forming a metal wire of a semiconductor device comprises steps of stacking a dielectric layer and a metal layer(120) in order on a substrate on which a semiconductor device is formed, coating a relux material(130) on the metal layer, performing an exposing and developing process after coating a negative photoresist(132) on the relux layer and forming a photoresist pattern for an upper metal wire, patterning the metal layer to align with a photoresist pattern and forming the metal wire, and removing the photoresist pattern and the relux material. In the exposing process, a negative reticle is used.