METHOD FOR FORMING LOCAL INTERCONNECTION LINE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming local interconnection line in a semiconductor device is to prevent a residual particle from being remained on the interlayer insulating layer after performing a blanket etch and prevent a barrier metal to be over-etched. CONSTITUTION: A local interconnection line forming method comprises the steps of: forming a semiconductor device including a gate electrode(102) and a source and drain region(104) in a semiconductor substrate(100); depositing a planarizing interlayer insulating layer(110) on the semiconductor substrate; forming a contact hole(112) that exposes a part of the gate electrode and a part of a surface of the source and drain region adjacent thereto in the planarizing interlayer insulating layer; and forming a selective metastable polysilicon layer(114) that electrically connects the source and drain region with the gate electrode.