| 摘要 |
PURPOSE: A method for forming a bit-line contact of a semiconductor device is to simultaneously and efficiently form the bit-line contact and a storage node contact without any residue. CONSTITUTION: A method for forming a bit-line contact of a semiconductor device comprises a first step of forming a device separating layer(15) on a semiconductor substrate(10) and stacking a gate oxide layer(20), a word-line layer(30) and a word-line mask layer(40) on the device separating layer in order and performing an etching process using a photoresist layer(50) to partially eliminate the word-line mask layer, a second step of removing the photoresist layer on a main cell drain and blanket-etching the word-line mask layer, the word-line mask layer and the gate oxide layer to form a gate with a lower phase difference, a third step of removing the photoresist on a peripheral circuit area and then stacking an interlayer dielectric layer on an entire area, a fourth step of etching the interlayer dielectric layer on the peripheral circuit area using a chemical mechanical polishing method to expose the word-line mask layer, and a fifth step of forming a bit-line contact and a storage node contact.
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