| 摘要 |
<p>preparation of silanes as original products to obtain silicon and silicon dioxide films in electronics. SUBSTANCE: method comprises rectification separation of silicon tetrachloride from reaction mixture, evaporation of silicon tetrachloride that remained after distillation of silicon tetrachloride of liquid mixture, heating of the resulting vapor mixture to 60-160 C and feeding it into disproportion reactor in which mixture is contacted with catalyst. Silicon tetrachloride, dichlorosilane and monosilane which are desired commercial products are isolated stagewise from mixture of silanes by partial condensation method, and mixture of silicon tetrachloride and unreacted chlorosilanes is recycled to rectification column. Catalyst includes macroporous anionites having preferably vinylpyridine units. EFFECT: method is waste free in closed cycle and fire and explosion-proof. 4 cl, 1 dwg, 4 ex</p> |
