Plasma processing apparatus and plasma processing method

摘要

The plasma processing apparatus and plasma processing method of the present invention are suitable for the application of plasma processing to etching, ashing, CVD, etc. in the manufacturing of large scale integrated circuits (LSIs) and liquid crystal display panels (LCDs), and useful for the manufacturing of LSIs and LCDs. The apparatus is characterized in that the reaction chamber has its side wall separated into an inner side wall which faces to the interior of the reaction chamber and an outer side wall which faces to the exterior of the reaction chamber, with the inner side wall being isolated electrically from other portions of the reaction chamber and not grounded electrically. This structure improves the repeatability of plasma processing. The apparatus is also characterized in that the inner side wall of reaction chamber is isolated thermally from other portions of the reaction chamber and equipped with temperature control means. This structure improves the temperature control performance for the inner side wall and also improves the maintainability of the apparatus.