| 摘要 |
<p>The present invention discloses a magnetic random access memory (MRAM). It improves upon conventional RAM designs by memorizing a logic bit value through magnetizing ferromagnetic material layer (34) near the intersection of a specific word line (14) and bit line (43). A write operation and an erase operation can be performed by changing direction of current flow on the bit line and word line. A read operation can be performed by monitoring an output current signal from an input current signal. A multiple layer design can be done on a silicon substrate to implement the MRAM by appropriately arranging the layers for the bit line, the word line, and the ferromagnetic material layer.</p> |
