发明名称 |
PROCESSING SYSTEM AND METHOD FOR CHEMICAL VAPOR DEPOSITION OF A METAL LAYER USING A LIQUID PRECURSOR |
摘要 |
A system (10) for depositing a layer of metal onto a substrate (16) through a chemical vapor deposition process comprises a process chamber (12) for receiving and processing a substrate (16). A vaporizer element (82) is positioned in a vaporization space (76) of the chamber adjacent the process space (14), and is operable for being heated to a temperature sufficient to vaporize a liquid metal-containing precursor, such as a copper precursor, into a process gas for delivery to said process space (14). A nozzle (74) is positioned opposite the vaporizer element (82) and is connectable to a liquid metal-containing precursor supply to atomize and direct the liquid metal-containing precursor into the vaporization space (76) and against the vaporizer element (82). A gas-dispersing element (78, 80) is positioned between the vaporization space (76) and the process space (14) to disperse the gas into the process space (14) and proximate the substrate (16).
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申请公布号 |
WO0042236(A2) |
申请公布日期 |
2000.07.20 |
申请号 |
WO1999US30570 |
申请日期 |
1999.12.22 |
申请人 |
TOKYO ELECTRON LIMITED;TOKYO ELECTRON ARIZONA, INC. |
发明人 |
HILLMAN, JOSEPH, T. |
分类号 |
B01J19/00;C23C16/18;C23C16/44;C23C16/448;C23C16/455;H01L21/28;H01L21/285;(IPC1-7):C23C16/44 |
主分类号 |
B01J19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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