| 摘要 |
A power MOSFET includes a semiconductor body (1) of a first conductivity type and is provided with a drain zone; a trough zone (2) is provided in the semiconductor body and has a conductivity type opposite to the first type. A source zone (4) is provided in the trough zone and is of the first conductivity type. An insulating layer (5) covers the surface of the trough zone at least between the drain zone and the source zone, and a gate electrode is provided on the insulating layer between the drain zone and the source zone. Trenches (7) are made in the semiconductor body and extend through the trough zone, parallel to the direction between the drain zone and the source zone. The walls of the trenches are provided with an insulating layer (15) and the trenches are filled out in the remaining parts with a conducting material (8), the latter specifically being highly doped polycrystalline silicon having charge-carriers of the first conductivity type.
|
