发明名称 A SEMICONDUCTOR DEVICE HAVING A METAL BARRIER LAYER FOR A DIELECTRIC MATERIAL HAVING A HIGH DIELECTRIC CONSTANT AND A METHOD OF MANUFACTURE THEREOF
摘要 The present invention provides a semiconductor device that has a metal barrier layer (145, 235) for a dielectric material, which can be used in an integrated circuit, if so desired. The semiconductor device provides a capacitance to the integrated circuit and in a preferred embodiment comprises a first layer (135, 220) located on a surface of the integrated circuit. A metal barrier layer (145, 235) is located on the first layer (135, 220) and is susceptible to oxidation by oxygen. A high K capacitor dielectric layer (150, 240) (i.e., a higher K than silicon dioxide) that contains oxygen, such as tantalum pentoxide, is located over the metal barrier layer (145, 235). The semiconductor device further includes a second layer (110, 225) located over the high K capacitor dielectric layer (150, 240).
申请公布号 WO0042667(A1) 申请公布日期 2000.07.20
申请号 WO2000US00696 申请日期 2000.01.11
申请人 LUCENT TECHNOLOGIES INC. 发明人 ALERS, GLENN, B.;MERCHANT, SAILESH, M.;ROY, PRADIP, K.
分类号 H01L21/02;H01L21/316;H01L29/49;(IPC1-7):H01L29/92 主分类号 H01L21/02
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