发明名称 FERROELECTRIC DEVICE WITH CAPPING LAYER AND METHOD OF MAKING SAME
摘要 A ferroelectric device (100, 200) includes a ferroelectric layer (112) and an electrode (116, 110). The ferroelectric material is made of a perovskite or a layered superlattice material. A superlattice generator metal oxide is deposited as a capping layer (114, 204) between said ferroelectric layer and said electrode to improve the residual polarization capacity of the ferroelectric layer.
申请公布号 WO0042643(A1) 申请公布日期 2000.07.20
申请号 WO1999US24226 申请日期 1999.10.15
申请人 SYMETRIX CORPORATION;MATSUSHITA ELECTRONICS CORPORATION 发明人 HAYASHI, SHINICHIRO;OTSUKI, TATSUO;PAZ DE ARAUJO, CARLOS, A.
分类号 H01L21/02;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/316 主分类号 H01L21/02
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