| 摘要 |
<p>A method of producing a silicon device of a single crystalline structure comprising forming an etching start pattern (4) on the surface of a silicon substrate (1), forming etched portions (4') of a narrow width extending in the direction of the depth of the substrate from the etching start pattern (4) by applying a voltage to the silicon substrate (1) in such a manner that the silicon substrate (1) serves as a positive electrode while immersing the silicon substrate (1) in a solution (10) containing fluorine ions, and forming a hollow structure (5) which is constituted of part of the silicon substrate (1) and forming a hollow portion (6) under the hollow structure (5) by promoting the etching of the silicon substrate (1) by increasing the current density in the silicon substrate (1) after the narrow etched portions (4') have reached a predetermined depth, so as to allow the neighboring etched portions to communicate with each other under the narrow etched portions (4').</p> |
