发明名称 |
INTERCONNECT STRUCTURE WITH A LOW PERMITTIVITY DIELECTRIC LAYER |
摘要 |
<p>A method of making a semiconductor device includes forming a low permittivity dielectric layer over one or more conductive lines of a semiconductor device. The dielectric layer is made using a silicon-containing material having a relatively low permittivity including, for example, silicon oxyfluoride (SiOyFx) and hydrogen silsesquioxane (HSQ). An optional oxide layer may be formed over the dielectric layer. At least a portion of the dielectric layer and/or the optional oxide layer is subsequently removed to form a planar dielectric layer having a contaminated surface layer. The contaminated surface layer is due to exposure to water and is removed by, for example, exposing the surface to an acid, such as hydrofluoric acid.</p> |
申请公布号 |
EP1019959(A1) |
申请公布日期 |
2000.07.19 |
申请号 |
EP19980913232 |
申请日期 |
1998.03.27 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
MAY, CHARLES;CHEUNG, ROBIN |
分类号 |
H01L21/3105;H01L21/312;H01L21/316;H01L21/768;H01L23/532;(IPC1-7):H01L21/768;H01L21/310 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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