Method of fabricating a split gate memory cell

摘要

A method of fabricating a novel split gate memory cell comprises forming a tunnel oxide layer (12) on a silicon substrate (14), forming a first conductive layer (16) over said tunnel oxide layer, etching a trench in said conductive layer to divide said conductive layer into two separate layers with a space therebetween, one such layer to become a first gate electrode and the other separate layer to become a floating gate electrode of the device, forming a dielectric layer (20) over the exposed surfaces, and depositing a second conductive layer (22) which will become a second control gate electrode over said dielectric layer <IMAGE>