Method for making integrated circuit device having dual damascene interconnect structure and metal electrode capacitor

摘要

An integrated circuit device and method of making include an interconnect structure (22) and a capacitor (24). The interconnect structure (22) includes a metal line (27) and a contact (26), and the capacitor includes upper and lower metal electrodes (44,49). The method includes forming a dielectric layer (38,40,42) adjacent a semiconductor substrate, and simultaneously forming a first opening (57) for the interconnect structure and a second opening (56) for the capacitor, in the first dielectric layer. The method further includes selectively depositing a first conductive layer (54) to fill the first opening (57) to form the interconnect structure (22), and forming the upper and lower metal electrodes (44,49) with a capacitor dielectric (46) therebetween to form the capacitor (24) in the second opening (56). The integrated circuit device provides a high-density capacitor having metal electrodes and which is compatible and integrated with dual damascene structures. As such, the capacitor is situated in a same level as a dual damascene interconnect structure.