发明名称 |
Method of making complete dielectric isolation structure in semiconductor integrated circuit |
摘要 |
<p>For controlling unwanted production of crystal defects from corners (6, 7) of isolated regions in a complete dielectric isolation structure, after at least one trench (5) or groove is provided through a mask of an insulating film (4) in a semiconductor substrate (3) adhered to an insulating film (2) of a base substrate (1), the mask (4) is side-etched and the insulating film (2) of the base substrate (1) is selectively etched at the same time to expose corners (6, 7) of the semiconductor substrate (3). The exposed corners (6, 7) of the semiconductor substrate (3) is then subjected to isotropic etching to remove a pointed portion therefrom. Thereafter, side surfaces of the semiconductor substrate (3) exposed within the trench (5) is oxidized to provide an insulting film (8) for dielectric isolation which has rounded corners.</p> |
申请公布号 |
EP0423722(B1) |
申请公布日期 |
2000.07.19 |
申请号 |
EP19900119835 |
申请日期 |
1990.10.16 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
BABA, YOSHIRO;KOSHINO, YUTAKA;OSAWA, AKIHIKO;YANAGIYA, SATOSHI |
分类号 |
H01L21/76;H01L21/762;H01L21/763;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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