| 摘要 |
A CCD image device in which the potential variation of a charge transferring region caused by a CST layer is minimized to enhance the charge transfer efficiency, is disclosed including a plurality of photo-detectors arranged regularly in row and column directions in the surface of a substrate of a first conductivity type; a plurality of charge transferring regions of a second conductivity type formed between the photo-detectors of the row direction; and a channel stop layer formed in the surface of the substrate in order to electrically insulate the respective photo-detectors and the respective charge transferring regions from each other. A CST doping concentration reducing region for decreasing the doping concentration of the channel stop layer is formed at least one in each part to which the neighboring two photo-detectors are adjacent.
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