| 摘要 |
PROBLEM TO BE SOLVED: To improve adhesiveness of a deposited inorganic barrier film to a copper surface of a copper interconnection structure by including exposure of a copper layer in an interconnected semiconductor structure to a reducing plasma before the formation of the inorganic barrier film on the copper interconnection structure. SOLUTION: A copper interconnection structure is exposed to a reducing plasma before an inorganic barrier film 24 is deposited. This reducing plasma is a non-oxidizing, i.e., oxygen-atom-free plasma atmosphere. A suitable plasma is selected from H2, N2, NH3, and rare gas, but it is not limited to these. Further, a combination of more than two of these reducing plasmas such as N2 and H2 is intended. N2 and NH3 are very preferable among these reducing plasmas. The adhesiveness of the inorganic barrier layer 24 to copper 20 can be improved by using this reducing plasma exposure process.
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