发明名称 REMOVING SOLUTION COMPOSITION FOR PHOTORESIST AND METHOD FOR REMOVING PHOTORESIST USING THE SAME
摘要 PROBLEM TO BE SOLVED: To obtain a removing solution composition for a photoresist having superior removing capability to any of a photoresist film and a degenerated film and capable of effectively preventing the corrosion of a substrate with a formed metallic film, in particular an Al, Al alloy or Ti film, even under conditions of high temperature treatment and to remove a photoresist using the composition. SOLUTION: This removing solution composition consists of (a) 2-30 wt.% hydroxylamines, (b) 2-35 wt.% water, (c) 25-40 wt.% monoethanolamine and/or 2-(2-aminoethoxy) ethanol, (d) 20-32 wt.% N-methyl-2-pyrrolidone and/or diethylene glycol monobutyl ether and (e) 2-20 wt.% aromatic hydroxy compound.
申请公布号 JP2000199971(A) 申请公布日期 2000.07.18
申请号 JP19990001864 申请日期 1999.01.07
申请人 TOKYO OHKA KOGYO CO LTD 发明人 TANABE MASAHITO;WAKIYA KAZUMASA;KOBAYASHI MASAICHI
分类号 H01L21/027;G03F7/42;(IPC1-7):G03F7/42 主分类号 H01L21/027
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