发明名称 |
Method for producing semiconductor device |
摘要 |
A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced.
|
申请公布号 |
US6090646(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19970935338 |
申请日期 |
1997.10.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG, HONGYONG;TAKEMURA, YASUHIKO;TAKAYAMA, TORU |
分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/04;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|