| 摘要 |
PROBLEM TO BE SOLVED: To provide a satisfactory thin-film transistor. SOLUTION: In a thin-film transistor having a semiconductor layer 33 constituting a source/drain region and a channel formation region, the thickness of the source/drain region part is made thinner than the thickness of the semiconductor layer of the channel formation region part, so that a part where electric field concentration generated in a boundary between a source region 36 and a channel formation region 38 and a boundary between a drain area 37 and the channel formation region 38 is shifted from a part, where a channel is formed. Then, off-currents (leakage currents) are reduced, and by preventing on-currents from being reduced, high conductance is realized. |
