| 摘要 |
Even when there is a large change in unevenness on the surface of an area to be exposed, scanning exposure is carried out without reducing the throughput by accurately bringing the surface of the area into focus to the image plane. Focus position measuring areas (15F and 15R) are set apart from a slit-shaped illumination field (3) by respective sections (16F and 16R) with a predetermined width in the scanning direction. To carry out scanning exposure for a shot area on a wafer, the shot area is covered by the measuring area (15F), for example, at an approach start point of the wafer, and the focus position of the surface of the shot area is measured at detecting points (P11 to P53) in the measuring area (15F). On the basis of the result of the measurement, controlled variables for the surface position of the wafer are determined to bring the wafer surface in the illumination field (3) into focus to the image plane during scanning exposure by an autofocusing method and an autoleveling method.
|
