Process for making high performance MOSFET with scaled gate electrode thickness

摘要

A process for making a high performance MOSFET with a scaled gate electrode thickness. In one embodiment, the process comprises first providing a substrate. A gate dielectric layer is formed on the substrate, and a gate electrode is formed on the gate dielectric layer. A middle portion of the gate electrode has a first height, and side portions of the gate electrode have heights that are less than the first height. A dopant species is implanted at a first energy level and at a first concentration, whereby lightly doped drain regions are formed in the substrate below the side portions of the gate electrode.