发明名称 |
Process for etching oxides in an electromagnetically coupled planar plasma apparatus |
摘要 |
In an apparatus for producing an electromagnetically coupled planar plasma comprising a chamber having a dielectric shield in a wall thereof and a planar coil outside of said chamber and adjacent to said window coupled to a radio frequency source, the improvement whereby a scavenger for fluorine is mounted in or added to said chamber. When a silicon oxide is etched with a plasma of a fluorohydrocarbon gas, the fluorine scavenger reduces the free fluorine radicals, thereby improving the selectivity and anisotropy of etching and improving the etch rate while reducing particle formation.
|
申请公布号 |
US6090303(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19960761045 |
申请日期 |
1996.12.05 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
COLLINS, KENNETH S.;MARKS, JEFFREY |
分类号 |
H01L21/00;H05H1/00;(IPC1-7):H05H1/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|