发明名称 |
MANUFACTURE OF MICROELECTRODE |
摘要 |
PROBLEM TO BE SOLVED: To provide a microelectrode manufacturing method capable of manufacturing an efficient microelectrode by making a simple manufacturing process. SOLUTION: The method has a process for etching a part of a semiconductor layer for forming an element and a part of an insulated film for an SOI on an SOI substrate, a process forming a semiconductor growing layer 4 on the surface of the SOI substrate by using an epitaxial growing device, a process for forming a wiring layer provided with a through electrode 6b and a pad 6a on the surface of an insulated film after forming the film on the surface of the layer 4 and a process for removing a semiconductor layer for a base being the rear surface of the microelectrode after then through the use of selective etching technique and then forming the supporting table 9 of the microelectrode by etching a part of the layer 1c and a part of the layer 4. |
申请公布号 |
JP2000197616(A) |
申请公布日期 |
2000.07.18 |
申请号 |
JP19990003339 |
申请日期 |
1999.01.08 |
申请人 |
HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD |
发明人 |
INOMAKI YOSHIHIRO;SAITO TOSHIO;KAWAGUCHI SHINJI;MORIYA SATOSHI;HORIUCHI MITSUAKI;TANABE SHINICHI;NODA HIDEO |
分类号 |
A61B5/0492;A61B5/0408;A61B5/0478;G01N27/30;H01L29/41 |
主分类号 |
A61B5/0492 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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