发明名称 MANUFACTURE OF MICROELECTRODE
摘要 PROBLEM TO BE SOLVED: To provide a microelectrode manufacturing method capable of manufacturing an efficient microelectrode by making a simple manufacturing process. SOLUTION: The method has a process for etching a part of a semiconductor layer for forming an element and a part of an insulated film for an SOI on an SOI substrate, a process forming a semiconductor growing layer 4 on the surface of the SOI substrate by using an epitaxial growing device, a process for forming a wiring layer provided with a through electrode 6b and a pad 6a on the surface of an insulated film after forming the film on the surface of the layer 4 and a process for removing a semiconductor layer for a base being the rear surface of the microelectrode after then through the use of selective etching technique and then forming the supporting table 9 of the microelectrode by etching a part of the layer 1c and a part of the layer 4.
申请公布号 JP2000197616(A) 申请公布日期 2000.07.18
申请号 JP19990003339 申请日期 1999.01.08
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 INOMAKI YOSHIHIRO;SAITO TOSHIO;KAWAGUCHI SHINJI;MORIYA SATOSHI;HORIUCHI MITSUAKI;TANABE SHINICHI;NODA HIDEO
分类号 A61B5/0492;A61B5/0408;A61B5/0478;G01N27/30;H01L29/41 主分类号 A61B5/0492
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