| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser element and a material for solid-solution semiconductor laser element, with which a laser element which oscillates in an infrared region of wavelength 0.4-8μm and operates near room temperature with variable wavelength, especially a laser element of a lattice matched double heterojunction structure and a quantum well structure is manufactured. SOLUTION: Materials for solid-solution semiconductor laser element represented by a general formula Pb1-x-yMgxYyX (where 0<x+y<1.0, 0<x<1.0, 0<=y<=0.1 in molar ratio, X: S, Se and Te, Y: group I, III, V and VII elements) and a laser element using it are grown with the use of a thin-film manufacture device such as a hot wall epitaxy device, etc. At this time, as a substrate, an appropriate substrate such as BaF2 (111) cleavage surface is used. After the end of growth, the solid-solution semiconductor laser material is taken out after the temperature of each part drops to the room temperature, and by purging the inside of a vacuum tank with adequate gas such as nitrogen, an appropriately formed thin film is manufactured.
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