| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD device with a structure in which particles are hard to adhere to a wafer in the case the wafer is carried into a process chamber. SOLUTION: This device is provided with a process chamber forming a plasma CVD film and a load lock chamber communicated with the process chamber via a slit valve 14 freely capable of opening and shuttering, and, by an air actuator, the slit valve is driven so as to be opened and shut. An opening and shuttering mechanism 30 for the slit valve is provided with the air actuator 34 raising and lowering the slit valve to open and shut it via a supporting arm 32, an air feed tube 38 feeding air to the air actuator 34 and an air flow rate controlling valve 40 (speed controller for the slit valve) provided at the air feed tube 38 and remote-controlled from a control board.
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