发明名称 |
Optically amplifying semiconductor diodes with curved waveguides for external cavities |
摘要 |
A semiconductor gain element has an active waveguide incident at an angle greater than normal incidence on an end facet. The waveguide may be a single stripe or may be a stripe coupled to a flared region. The waveguide may include a curved portion to produce the non-normal incidence on the end facet. The gain element may be used as the gain element within a tunable, external cavity laser, or may also be used as an amplifier to amplify an external signal. The waveguide may be formed from a central portion surrounded laterally by cladding regions. Further, absorbing regions may be positioned outside the cladding regions to absorb light that does not propagate within the waveguide.
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申请公布号 |
US6091755(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19970975559 |
申请日期 |
1997.11.21 |
申请人 |
SDL, INC. |
发明人 |
SANDERS, STEVE;HAGBERG, MATS;LANG, ROBERT J. |
分类号 |
H01S5/10;H01S5/14;H01S5/22;(IPC1-7):H01S3/10;H01S3/08 |
主分类号 |
H01S5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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