发明名称 Optically amplifying semiconductor diodes with curved waveguides for external cavities
摘要 A semiconductor gain element has an active waveguide incident at an angle greater than normal incidence on an end facet. The waveguide may be a single stripe or may be a stripe coupled to a flared region. The waveguide may include a curved portion to produce the non-normal incidence on the end facet. The gain element may be used as the gain element within a tunable, external cavity laser, or may also be used as an amplifier to amplify an external signal. The waveguide may be formed from a central portion surrounded laterally by cladding regions. Further, absorbing regions may be positioned outside the cladding regions to absorb light that does not propagate within the waveguide.
申请公布号 US6091755(A) 申请公布日期 2000.07.18
申请号 US19970975559 申请日期 1997.11.21
申请人 SDL, INC. 发明人 SANDERS, STEVE;HAGBERG, MATS;LANG, ROBERT J.
分类号 H01S5/10;H01S5/14;H01S5/22;(IPC1-7):H01S3/10;H01S3/08 主分类号 H01S5/10
代理机构 代理人
主权项
地址