发明名称 |
Self-aligned SOI device with body contact and NiSi2 gate |
摘要 |
A self-aligned SOI device with body contact and silicide gate. The SOI device is formed using an ordinary substrate such as silicon. A silicide gate is self-aligned and formed from re-crystallization of nickel and amorphous silicon. The self-aligned silicide gate includes gate contact areas, and is self-aligned with respect to the gate opening, the source and drain regions and a nitride isolation layer. Nickel spacers deposited adjacent the isolation layer, and amorphous silicon deposited between the nickel spacers, form the self-aligned silicide gate through a silicidation process.
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申请公布号 |
US6091123(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19980093580 |
申请日期 |
1998.06.08 |
申请人 |
ADVANCED MICRO DEVICES |
发明人 |
KRIVOKAPIC, ZORAN;PRAMANICK, SHEKHAR |
分类号 |
H01L21/20;H01L21/28;H01L21/336;H01L29/06;H01L29/423;H01L29/49;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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