| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with superior radiating characteristics which can be formed in a few manufacturing processes, and a semiconductor device in which the reliability of a circuit operation can be improved, by reducing effects of noise generated in the operation of a power element on the circuit operation. SOLUTION: In a semiconductor device 1 of an intelligent power device, pads 311-315, 321-325, etc., for an integrated circuit are arranged in addition to pads 212, 213, 222, 223, etc., for a power element in each power element area 21-24. Also, a shield layer is formed between each power element area 21-24 and each of pads 311-315, 321-325, etc., for the integrated circuit. |
