| 摘要 |
PROBLEM TO BE SOLVED: To obtain good recording and reproducing characteristics by forming a first dielectric layer, phase transition type recording layer, second dielectric layer, and reflection layer having specified crystallization temp. on a substrate in this order, and controlling the thermal conductivity of the second dielectric layer higher than the thermal conductivity of the first dielectric layer. SOLUTION: This optical recording medium has a first dielectric layer 31, phase transition type recording layer 4, second dielectric layer 32 and reflection layer 5 formed in this order on a substrate 2, and further, has a protective layer 6 on the reflection layer 5. The crystallization temp. of the recording layer is >=160 deg.C, and the thermal conductivity of the second dielectric layer 32 is specified to be higher than the thermal conductivity of the first dielectric layer 31. The recording track pitch is specified to <0.7 μm, and the recording layer essentially comprises Ge, Sb and Te, or the recording layer contains nitrogen. When high-density recording is performed, especially with <0.7 μm track pitch, the cross erasing can be enough suppressed. |
