METHOD AND DEVICE FOR PATTERN FORMING

摘要

PROBLEM TO BE SOLVED: To realize a negative type silylation process. SOLUTION: A chemical amplification type positive type resist is applied on a substrate 1 to form a resist film 3 without heating. The resist film 3 is exposed by irradiation with energy beams (ArF excimer laser light 5) via a mask 4 having the desired pattern shape. After the exposure, the resist film 3 is heated. Silicon is introduced into the surface of the exposed part of the resist film 3 by subjecting the resist film 3 to silylation treatment 7. The resist film is then dry-etched 9, using the silicon-containing exposed part as a mask to form an objective resist pattern 3A.