发明名称 SEMICONDUCTOR AMPLIFIER CIRCUIT
摘要 PROBLEM TO BE SOLVED: To eliminate the effect of ripple on the power supply side, and the like, by setting the electrode of a first transistor at such a potential as the junction of the surrounding region and the inside region is biased reversely. SOLUTION: A circuit of NMOS differential transistor Tr1, Tr2 is provided in a floating region 23 along with constant current sources 25, 26 of Tr3-Tr6. The Tr1, Tr2 operating at the negative power supply side potential where the potential at any electrode of source, drain or gate is equal to or lower than the ground potential GND are floated from a substrate along with the Tr3-Tr6. Consequently, these NMOS transistor Tr1-Tr6 can be operated from an independent power supply separately from the positive power supply for bipolar transistors Q3, Q4, Q7. Since respective circuits operate using the ground GND as a reference potential, power supply ripple is reduced by a factor of two or more as compared with conventional case.
申请公布号 JP2000200845(A) 申请公布日期 2000.07.18
申请号 JP19990307617 申请日期 1999.10.28
申请人 ROHM CO LTD 发明人 HOSHINO TAICHI;ADACHI KENGO;OYAMA EITARO
分类号 H01L27/06;H01L21/8222;H01L21/8248;H01L21/8249;H03F1/30;H03F3/45;(IPC1-7):H01L21/824;H01L21/822 主分类号 H01L27/06
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