发明名称 |
Methods for selective plasma etch |
摘要 |
Disclosed is a method for improving the selectivity of dielectric layers to photoresist layers and base layers. The method is performed in a plasma processing chamber, and the photoresist layer is coated over the dielectric layer. The method includes introducing an etchant source gas into the plasma processing chamber, which consists essentially of a CxFy gas and an N2 gas. The method further includes striking a plasma in the plasma processing chamber from the etchant source gas. The method additionally includes etching at least a portion of the dielectric layer with the plasma through to a base layer that underlies the dielectric layer. The method is also well suited for anisotropically etching an oxide layer with very high selectivities to Si, Si3N4, TiN, and metal silicides.
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申请公布号 |
US6090304(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19970919659 |
申请日期 |
1997.08.28 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
ZHU, HELEN H.;MUELLER, GEORGE A.;NGUYEN, THOMAS D.;LI, LUMIN |
分类号 |
H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):C03C15/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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