发明名称 |
Apparatus and method for forming semiconductor thin layer |
摘要 |
A method and apparatus for forming a semiconductor thin layer on a substrate surface employs a gas outlet for supplying gas to the substrate, a rotatable holder for holding the substrate thereon such that a surface of the substrate is exposed to the gas while the substrate orbits with rotation of the holder, and a heater generates and supplies heat energy to the substrate. A cover wall extends over the surface of the substrate which is exposed to the gas. A distance between the exposed surface of the substrate and the cover wall in a direction parallel to a rotational axis of the rotatable holder decreases radially outward over the substrate orbiting with rotation of the holder about a rotational axis of the holder.
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申请公布号 |
US6090211(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19970820390 |
申请日期 |
1997.03.12 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KAMEI, HIDENORI;TAKEISHI, HIDEMI;OKU, YASUNARI |
分类号 |
C23C16/44;C23C16/455;C23C16/458;C30B25/14;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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