| 摘要 |
A semiconductor device formed on a semiconductor substrate having a first region and a second region, comprising: a wiring layer made of a first conductive layer formed in the second region; a first insulating film formed on the wiring layer; a second insulating film formed on the first region and on the first insulating film; a first contact hole formed in the first region through the second insulating film, and reaching the surface of the first insulating film; a second contact hole having a larger diameter than the first contact hole formed in the second region through the second insulating film, and reaching the surface of the first insulating film; a plug made of a second conductive layer and filled in the first contact hole; a side spacer made of the second conductive layer and formed on the side wall of the second contact hole; and a third contact hole having a smaller diameter than the second contact hole, formed through the first insulating film positioned under the second contact hole, and reaching the wiring layer. There are provided the semiconductor device and its manufacture method which are capable of stably realizing a self-aligned contact method of forming contact holes, without increasing the number of manufacture processes.
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