| 摘要 |
A semiconductor light emitting device has a light emitting chip and a conductive member. A light emitting chip is formed by an insulating substrate. A semiconductor layered portion has semiconductor layers forming a light emitting layer grown on the insulating substrate. A first electrode (p-side electrode) is formed in electrical connection with a first conductivity type semiconductor layer on a surface side of the semiconductor layered portion. A second electrode (n-side electrode) is formed in electrical connection with a second conductivity type semiconductor layer at a position exposed by partly etching the semiconductor layered portion. The light emitting chip is adhered at a backside of the insulating substrate to the conductive member through a conductive adhesive, and the conductive member is electrically connected to the second electrode.
|
