| 摘要 |
PROBLEM TO BE SOLVED: To respond more rapidly to a change in the temperature of a wafer under a low-pressure environment. SOLUTION: A temperature probe for low-pressure treatment with its raised heat responsiveness is used, a fluid is fed in a fluid carrying passage within a probe head to increase the pressure between the probe head 30 and a semiconductor wafer 50 and a heat conductivity between both of the head 30 and the wafer 50 is increased. This treatment equipment for the wafer has a treating chamber 40, a treating gas entrance 42 for feeding the gaseous environment of an ambient treating pressure to this chamber 40, the probe 30, which comes into contact with the wafer to be treated and has the contact surface of the fluid carrying passage communicating with the interior of the probe with the wafer, and a gas source 52 for feeding gas through the passage within the probe for increasing the pressure over the contact surface more than the ambient treating pressure.
|
