发明名称 |
High density NAND structure nonvolatile memories |
摘要 |
The present invention includes pad oxides that are separated from each other and on a substrate. First isolations are formed on the pad oxides. Second isolations are formed on the substrate, between the pad oxides. Floating gates are formed on the second isolations and between the first isolations. Third isolations are formed at the top of the floating gates. A word line is formed on the first isolations and on the third isolations. Bit lines are formed in the substrate and under the first isolations.
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申请公布号 |
US6091100(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19980020230 |
申请日期 |
1998.02.06 |
申请人 |
TEXAS INSTRUMENTS - ACER INCORPORATED |
发明人 |
WU, SHYE-LIN |
分类号 |
H01L21/8247;(IPC1-7):H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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