发明名称 |
Fabrication of mid-cap metal gates compatible with ultra-thin dielectrics |
摘要 |
A method of fabricating a mid-gap workfunction tungsten gate or W electrode directly onto a gate dielectric material for use in high speed/high density advanced MOS and CMOS devices is provided which utilizes low temperature/low pressure CVD of a tungsten carbonyl. MOS and CMOS devices containing one or more of the CVD W gates or W electrodes manufactured by the present invention are also provided herein.
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申请公布号 |
US6091122(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19980021262 |
申请日期 |
1998.02.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BUCHANAN, DOUGLAS ANDREW;MCFEELY, FENTON READ;YURKAS, JOHN JACOB |
分类号 |
H01L29/78;C23C16/16;H01L21/28;H01L21/3205;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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